State of the art electrical, optical and structural characterisation techniques are being used to optimise different thin film metallisation processes, ion etching and heat treatment procedures of a wide variety of electronic materials used in microelectronics manufacturing. The change of electronic materials by controlled modification of their electro-optical properties when exposing them to radiation and energetic particles is being researched

Auret FD, Goodman SA, Myburg G, Meyer WE, Spaeth J-M, Gibart P, Beaumont B: 2001. Electrical characterization of growth-induced defects in n-GaN. Radiation Effects and Defects in Solids, 156(1-4), pp 255-259.

Auret FD, Goodman SA, Myburg G, Mohney SE, de Lucca JM: 2001. Processing-induced electron traps in n-type GaN. Materials Science and Engineering, B82 / May, pp 102-104.

Goodman SA, Auret FD, Legodi MJ, Beaumont B, Gibart P: 2001. Characterization of electron-irradiated n-GaN. Applied Physics Letters, 78(24) / Jun, pp 3815-3817.

Goodman SA, Auret FD, Myburg G, Legodi MJ, Gibart P, Beaumont B: 2001. Deep levels introduced in n-GaN grown by the ELOG technique by high-energy electron irradiation. Materials Science and Engineering, 82 / May, pp 95-97.

Goodman SA, Auret FD, Myburg G, Spaeth J-M, Beaumont B, Gibart P: 2001. Radiation induced defects in n-GaN, an overview. Radiation Effects and Defects in Solids, 156(1-4), pp 227-233.

Kunert HW, Lavitska E: 2001. Stresses and strains in anisotropic cubic ultra-tjin overlayers. Crystal Research and Technology, 36(8-10) / Dec, pp 1045-1057.

Kunert HW: 2001. The alpha-particle irradiation and annealing effect on the vibrational modes in the GaAs-nipi doping superlattices. Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, 4413 / Nov, pp 188-191.

Mamor M, Willander M, Auret FD, Meyer WE, Sveinbjornsson E: 2001. Configurationally metastable defects in irradiated epitaxially grown boron-doped p-type Si. Physical Review B - Condensed Matter, 63 / Dec, pp 1-5.

Prins JF: 2001. Ballistic self-annealing during ion implantation. Journal of Physics D - Applied Physics, 34 / Oct, pp 3003-3010.

Prins JF: 2001. C⁺-damaged diamond: Electrical measurements after rapid thermal annealing to 500^oC. Diamond and Related Materials, 10 / Mar-Jun, pp 463-468.

Prins JF: 2001. Graphitization and related variable-range-hopping conduction in ion-implanted diamond. Journal of Physics D - Applied Physics, 34 / Jul, pp 2089-2096.

Prins JF: 2001. Irradiating diamond: Aspects of defect generation, accumulation and annealing. Radiation Effects and Defects in Solids, 156(1-4), pp 173-179.

Prins JF: 2001. Nitrogen-related n-type conduction with low thermal activation in diamond. Semiconductor Science and Technology, 16 / Aug, pp L50-L52.

Prins JF: 2001. Using ion implantation to dope diamond - an update on selected issues. Diamond and Related Materials, 10 / Sep, pp 1756-1764.

Prins JF: 2001. Vacancy diffusion and trapping in electron-irradiated type IaA diamonds. Diamond and Related Materials, 10 / Jun, pp 87-93.

Vantomme A, Hogg SM, Wu MF, Pipeleers B, Swart M, Goodman SA, Auret FD, Iakoubovskii k, Adriaenssens GJ, Jacobs K, Moerman I: 2001. Suppression of rare-earth implantation-induced damage in GaN. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 175-177 / Apr, pp 148-153.