State of the art electrical, optical and structural characterisation techniques are being used to optimise different thin film metallisation processes, ion etching and heat treatment procedures of a wide variety of electronic materials used in microelectronics manufacturing. The change of electronic materials by controlled modification of their electro-optical properties when exposing them to radiation and energetic particles is being researched

Auret FD: 2001. Electrical Characterization of Defects Introduced in Epitaxially Grown GaAs by Electron-, Proton- and He-Ion Irradiation. In Defects in Optoelectronic Materials, (7), Gordon and Breach Science Publishers, pp 255-343.

Prins JF: 2001. Large dopants in diamond. In Properties, Growth and Applications of Diamond, (3.2), INSPEC, The Institution of Electrical Engineers, London, London, pp 331-336.