Auret FD, Goodman SA, Hayes M, Legodi MJ, Hullavarad SS, Friedland EKH, Beaumont B, Gibart P: 2001. Electrical characterisation of epitaxially grown n-GaN bombarded with high- and low-energy protons. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 175-177 / Apr, pp 292-295.

Auret FD, Goodman SA, Hayes M, Legodi MJ, van Laarhoven HA, Look DC: 2001. Electrical characterization of 1.8 MeV proton-bombarded ZnO. Applied Physics Letters, 79(19) / Nov, pp 3074-3076.

Auret FD, Goodman SA, Hayes M, Legodi MJ, van Laarhoven HA, Look DC: 2001. The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnO. Journal of Physics: Condensed Matter, 13 / Sep, pp 8989-8999.

Auret FD, Goodman SA, Myburg G, Meyer WE, Spaeth J-M, Gibart P, Beaumont B: 2001. Electrical characterization of growth-induced defects in n-GaN. Radiation Effects and Defects in Solids, 156(1-4), pp 255-259.

Auret FD, Goodman SA, Myburg G, Mohney SE, de Lucca JM: 2001. Processing-induced electron traps in n-type GaN. Materials Science and Engineering, B82 / May, pp 102-104.

Brink DJ: 2001. Optical characterization. Applied Physics A - Materials Science & Processing, 72 / May, pp 648-652.

Brink DJ: 2001. Radiation effects of ion beams in diamonds. Applied Physics A-Solids and Surfaces, 72 / May, pp 648-652.

Friedland EKH, Hauser T, Klatt CH, Demanet CM: 2001. Ion beam channeling analysis and atomic force microscopy. Applied Physics A - Materials Sciences & Processing, 72 / May, pp 664-670.

Friedland EKH: 2001. Radiation damage in metals. Critical Reviews in Solid State and Materials Sciences, 26(2) / Jun, pp 87-143.

Goodman SA, Auret FD, Legodi MJ, Beaumont B, Gibart P: 2001. Characterization of electron-irradiated n-GaN. Applied Physics Letters, 78(24) / Jun, pp 3815-3817.

Goodman SA, Auret FD, Myburg G, Legodi MJ, Gibart P, Beaumont B: 2001. Deep levels introduced in n-GaN grown by the ELOG technique by high-energy electron irradiation. Materials Science and Engineering, 82 / May, pp 95-97.

Goodman SA, Auret FD, Myburg G, Spaeth J-M, Beaumont B, Gibart P: 2001. Radiation induced defects in n-GaN, an overview. Radiation Effects and Defects in Solids, 156(1-4), pp 227-233.

Kalbitzer S, Klatt CH: 2001. General considerations on data storage. Applied Physics A - Solids and Surfaces, 72 / May, pp 640.

Kalbitzer S: 2001. Diamond for high-density optical recording: Abstract. Applied Physics A-Solids and Surfaces, 72 / May, pp 639.

Kalbitzer S: 2001. Diamond for high-density optical recording: Conclusions. Applied Physics A-Solids and Surfaces, 72 / May, pp 639-640.

Kunert HW, Lavitska E: 2001. Stresses and strains in anisotropic cubic ultra-tjin overlayers. Crystal Research and Technology, 36(8-10) / Dec, pp 1045-1057.

Kunert HW, Maurice T, Brink DJ, Prinsloo LC, Malherbe JB, Camassel J: 2001. Raman and photoluminescence spectroscopy from N⁺₂-ion implanted and a-irradiated and annealed GaN/sapphire. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 181 / Jul, pp 286-292.

Kunert HW, Maurice T, Hauser T, Malherbe JB, Prinsloo LC, Brink DJ, Falkovsky LA, Camassel J: 2001. Effects of hydrogen implantation and annealing on the vibrational properties of 6H-SiC. Materials Science Forum, 353-356, pp 275-278.

Kunert HW: 2001. Effect of the alpha-particle irradiation on the photoluminescence and Raman spectroscopy from. Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, 4413 / Nov, pp 148-152.

Kunert HW: 2001. Electronic and structural properties of the n-GaAs: Si as-grown,