Contact details
Research interests
Research output

Electronics and micro-electronics

Molecular Design

Characterisation and modification of materials

Thin films and electronic materials

Electrically conducting and light emitting polymers

Auret FD, Goodman SA, Hayes M, Legodi MJ, Hullavarad SS, Friedland EKH, Beaumont B, Gibart P: 2001. Electrical characterisation of epitaxially grown n-GaN bombarded with high- and low-energy protons. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 175-177/Apr, pp 292-295.

Auret FD, Goodman SA, Hayes M, Legodi MJ, van Laarhoven HA, Look DC: 2001. Electrical characterization of 1.8 MeV proton-bombarded ZnO. Applied Physics Letters, 79(19)/Nov, pp 3074-3076.

Auret FD, Goodman SA, Hayes M, Legodi MJ, van Laarhoven HA, Look DC: 2001. The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnO. Journal of Physics: Condensed Matter, 13/Sep, pp 8989-8999.

Auret FD, Goodman SA, Myburg G, Meyer WE, Spaeth J-M, Gibart P, Beaumont B: 2001. Electrical characterization of growth-induced defects in n-GaN. Radiation Effects and Defects in Solids, 156(1-4), pp 255-259.

Auret FD, Goodman SA, Myburg G, Mohney SE, de Lucca JM: 2001. Processing-induced electron traps in n-type GaN. Materials Science and Engineering, B82/May, pp 102-104.

Goodman SA, Auret FD, Legodi MJ, Beaumont B, Gibart P: 2001. Characterization of electron-irradiated n-GaN. Applied Physics Letters, 78(24)/Jun, pp 3815-3817.

Goodman SA, Auret FD, Myburg G, Legodi MJ, Gibart P, Beaumont B: 2001. Deep levels introduced in n-GaN grown by the ELOG technique by high-energy electron irradiation. Materials Science and Engineering, 82/May, pp 95-97.

Goodman SA, Auret FD, Myburg G, Spaeth J-M, Beaumont B, Gibart P: 2001. Radiation induced defects in n-GaN, an overview. Radiation Effects and Defects in Solids, 156(1-4), pp 227-233.

Mamor M, Willander M, Auret FD, Meyer WE, Sveinbjornsson E: 2001. Configurationally metastable defects in irradiated epitaxially grown boron-doped p-type Si. Physical Review B - Condensed Matter, 63/Dec, pp 1-5.

Vantomme A, Hogg SM, Wu MF, Pipeleers B, Swart M, Goodman SA, Auret FD, Iakoubovskii k, Adriaenssens GJ, Jacobs K, Moerman I: 2001. Suppression of rare-earth implantation-induced damage in GaN. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 175-177/Apr, pp 148-153.

Auret FD: 2001. Electrical Characterization of Defects Introduced in Epitaxially Grown GaAs by Electron-, Proton- and He-Ion Irradiation. (7), pp 255-343.