| Collaboration: |
China-SA Intergovernmental agreement |
| Researcher: |
Brink DJ |
| Project: |
Conversion of Gas and Si into wide band gap electronic materials GaN and SiC by ion implantation |
| |
| Collaboration: |
China-SA Intergovernmental agreement |
| Researcher: |
Auret FD |
| Project: |
Optimisation of metallization procedures on group IV-IV compound - semiconductors |
| |
| Collaboration: |
CNRS-SA Intergovernmental agreement |
| Researcher: |
Malherbe JB |
| Project: |
Studying of low energy ion-solid interaction on semiconductor surfaces |
| |
| Collaboration: |
Poland-SA Intergovernmental agreement |
| Researcher: |
Malherbe JB |
| Project: |
Ion bombardment-induced protrusions of semiconductor materials |
| |
| Collaboration: |
Poland-SA Intergovernmental agreement |
| Researcher: |
Auret FD |
| Project: |
Microscopic structure of technologically important defects in Gallium Nitride and Gallium Arsenic studied by the high resolution Laplace Deep Level Transient Spectroscopy |
| |
