Faculty of Natural and Agricultural Sciences
School of Physical Sciences
Department of Physics
Auret, FD
MSc(Fisika) MSc(Toeg Wisk) DSc(Fisika)(Pret) - Professor
NRF Rating: B1
Contact Details
Research Interests
Research Output
Contact Details:
Telephone number: 012 420 2684 /4151
Fax number: 012 362 5288
E-mail address: fauret@postino.up.ac.za
Research Interests:
Thin films and electronic materials
Nano technology
Characterisation and modification of materials
Molecular Design
Electronics and micro-electronics
Research Output:
Research articles in refereed specialist journals:
Auret FD, Deenapanray PNK: 2004. Deep level transient spectroscopy of defects in high-energy light-particle irradiated Si. Critical Reviews in Solid State and Materials Sciences, 29, pp 1-44.
Auret FD, Meyer WE, Wu L, Hayes M, Legodi MJ, Beaumont B, Gibart P: 2004. Electrical characterisation of hole traps in n-type GaN. Physica Status Solidi A-Applied Research, 201 (10) / July, pp 2271-2276`.
Wu L, Meyer WE, Auret FD: 2004. Reactivation and passivation of the Ec - 0.61 eV deep level in GaN. Physica Status Solidi A-Applied Research, 201 (10) / Aug, pp 2277-2280.
Nel JM, Auret FD, Wu L, Legodi MJ, Meyer WE, Hayes M: 2004. Fabrication and characterisation of NiO/ZnO structures. Sensors and Actuators B-Chemical, In Sensors and Actuators B, 100 / Apr, Elsevier, pp 270-276.
Papers in refereed, published conference proceedings:
Legodi MJ, Auret FD, Hayes M: 2004. Electrical characterization of ion bombarded AlGaN Schottky photodetectors. Physica Status Solidi A-Applied Research, In Physica Status Solidi (c): Conference Proceedings, 1 (9) / Jun, Wiley-VCH, pp 2328-2332.
Meyer WE, Auret FD: 2004. Effect of thermal radiation on electron emission from the E2 defect in n-GaAs. Physics Letters A, In Physica Status Solidi (c): Conference Proceedings, 1 (9) / Jul, Wiley-VCH, pp 2333-2336.
Auret FD, Wu L, Meyer WE, Nel JM, Legodi MJ, Hayes M: 2004. Electrical characterisation of NiO/ZnO structures. Physics Letters A, In Physica Status Solidi (c): Conference Proceedings, 1 (4) / Mar, Wiley-VCH, pp 674-677.
Deenapanray PNK, Krispin M, Tan HH, Jagadish C, Auret FD: 2004. Defect engineering and atomic relocation processes in impurity-free disordered GaAs and AlGaAs. In Progress in Compound Semiconductor Materials III-Electronic and Optoelectronic Applications, Materials Research Society, pp 103-114.
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